Search results
Results from the WOW.Com Content Network
Metal-oxide varistor manufactured by Siemens & Halske AG. Modern varistor schematic symbol, which is the same as a thermistor symbol [1]. A varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. [2]
The strict physics definition treats passive components as ones that cannot supply energy themselves, whereas a battery would be seen as an active component since it truly acts as a source of energy. However, electronic engineers who perform circuit analysis use a more restrictive definition of passivity.
These are designed to tolerate large surge currents for the suppression of overvoltage transients. In many applications this function is now served by metal oxide varistors (MOVs), particularly for trapping voltage transients on the power mains.
1A1A44J5 - Unit 1, Assembly 1, Sub-Assembly 44, Jack 5 (J5 is a connector on a box referenced as A44) 1A1A45J333 - Unit 1, Assembly 1, Sub-Assembly 45, Jack 333 (J333 is a connector on a box referenced as A45) A cable connecting these two might be: 1A1W35 - In the assembly A1 is a cable called W35. Connectors on this cable would be designated:
From Wikipedia, the free encyclopedia. Redirect page
Metal oxide chemiresistor sensors were first commercialized in 1970 [12] in a carbon monoxide detector that used powdered SnO 2. However, there are many other metal oxides that have chemiresistive properties. Metal oxide sensors are primarily gas sensors, and they can sense both oxidizing and reducing gases. [2]
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
MOS stands for metal-oxide-semiconductor, reflecting the way MOS-transistors were originally constructed, predominantly before the 1970s, with gates of metal, typically aluminium. Since around 1970, however, most MOS circuits have used self-aligned gates made of polycrystalline silicon , a technology first developed by Federico Faggin at ...