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  2. Memory timings - Wikipedia

    en.wikipedia.org/wiki/Memory_timings

    The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS

  3. Time-slot interchange - Wikipedia

    en.wikipedia.org/wiki/Time-Slot_Interchange

    In a time-slot interchange (TSI) switch, two memory accesses are required for each connection (one to read and one to store). Let T be the time to access the memory. Therefore, for a connection, 2T time will be taken to access the memory. If there are n connections and t is the operation time for n lines, then t=2nT which gives n=t/2T

  4. Memory Reference Code - Wikipedia

    en.wikipedia.org/wiki/Memory_Reference_Code

    For instance, under a 1,066MHz FSB, the only choices regarding memory speed in the MRC are DDR2-667 and DDR2-800. We have to provide additional choices. We have to provide additional choices. For people who want higher memory frequency, we used the setting of 800MHz FSB:DDR2-800 in MRC, but overclocked it to work with a 1,066MHz FSB, so we ...

  5. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    To refresh one row of the memory array using RAS only refresh (ROR), the following steps must occur: The row address of the row to be refreshed must be applied at the address input pins. RAS must switch from high to low. CAS must remain high. At the end of the required amount of time, RAS must return high.

  6. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .

  7. Average memory access time - Wikipedia

    en.wikipedia.org/wiki/Average_memory_access_time

    A model, called Concurrent-AMAT (C-AMAT), is introduced for more accurate analysis of current memory systems. More information on C-AMAT can be found in the external links section. AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the ...

  8. MemTest86 - Wikipedia

    en.wikipedia.org/wiki/Memtest86

    MemTest86 and Memtest86+ are memory test software programs designed to test and stress test an x86 architecture computer's random-access memory (RAM) for errors, by writing test patterns to most memory addresses, reading back the data, and comparing for errors. [6]

  9. Memory latency - Wikipedia

    en.wikipedia.org/wiki/Memory_latency

    Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache, it takes longer to obtain them, as the processor will have to communicate with the external memory cells. Latency is therefore a fundamental measure of the speed ...