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Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as ...
Same build as miniSD but greater capacity and transfer speed, 4 GB to 32 GB. 8 GB is largest in early-2011 (not compatible with older host devices). microSDHC: 2007 32 GB [4] Same build as microSD but greater capacity and transfer speed, 4 GB to 32 GB. [5] (not compatible with older host devices) SDXC: 2009 1 TB
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.
Memory clock I/O bus clock Transfer rate Theoretical bandwidth DDR-200, PC-1600 100 MHz 100 MHz 200 MT/s 1.6 GB/s DDR-400, PC-3200 200 MHz 200 MHz 400 MT/s 3.2 GB/s DDR2-800, PC2-6400 200 MHz 400 MHz 800 MT/s 6.4 GB/s DDR3-1600, PC3-12800 200 MHz 800 MHz 1600 MT/s 12.8 GB/s DDR4-2400, PC4-19200 300 MHz 1200 MHz 2400 MT/s 19.2 GB/s
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
The documentation of modern memory modules, such as the standards for the memory ICs [8] and a reference design of the module [9] requires over one hundred pages. The standards specify the physical and electrical characteristics of the modules, and include the data for computer simulations of the memory module operating in a system. [10]
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