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  2. Physical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Physical_vapor_deposition

    Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...

  3. Electron-beam physical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Electron-beam_physical...

    The PVD process can be carried out at lower deposition temperatures and without corrosive products, but deposition rates are typically lower. Electron-beam physical vapor deposition, however, yields a high deposition rate from 0.1 to 100 μm / min at relatively low substrate temperatures, with very high material utilization efficiency.

  4. Novellus Systems - Wikipedia

    en.wikipedia.org/wiki/Novellus_Systems

    It was a supplier of chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), electrochemical deposition (ECD), ultraviolet thermal processing (UVTP), and surface preparation equipment used in the manufacturing of semiconductors.

  5. Applied Materials - Wikipedia

    en.wikipedia.org/wiki/Applied_Materials

    The company develops and manufactures equipment used in the wafer fabrication steps of creating a semiconductor device, including atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), rapid thermal processing (RTP), chemical mechanical polishing (CMP), etch, ion implantation and wafer inspection. [32]

  6. Sputter deposition - Wikipedia

    en.wikipedia.org/wiki/Sputter_deposition

    Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]

  7. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).

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  9. Veeco - Wikipedia

    en.wikipedia.org/wiki/Veeco

    Veeco Instruments Inc. is a global capital equipment supplier, headquartered in the U.S., that designs and builds processing systems used in semiconductor and compound semiconductor manufacturing, data storage and scientific markets for applications such as advanced packaging, photonics, power electronics and display technologies.

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