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  2. Strained silicon - Wikipedia

    en.wikipedia.org/wiki/Strained_silicon

    Carbon doping as low as 0.25% in the N-channel MOSFET source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed silicon nitride layer is another way to create uniaxial tensile strain. As opposed to wafer-level methods of inducing strain on the channel layer ...

  3. Strain gauge - Wikipedia

    en.wikipedia.org/wiki/Strain_gauge

    An unmounted resistive foil strain gauge. A strain gauge takes advantage of the physical property of electrical conductance and its dependence on the conductor's geometry. . When an electrical conductor is stretched within the limits of its elasticity such that it does not break or permanently deform, it will become narrower and longer, which increases its electrical resistance end-to-

  4. File:Strain gauge.svg - Wikipedia

    en.wikipedia.org/wiki/File:Strain_gauge.svg

    A strain gauge, typically glued onto a sample of material to measure its deformation. The blue material is a conductor, so current must flow through the narrow vertical channels. If the gauge is stretched vertically, the channels get longer and narrower. This increases the gauge's electrical resistance, which can be measured to work out the strain.

  5. Gauge factor - Wikipedia

    en.wikipedia.org/wiki/Gauge_factor

    In constantan strain gauges (the most commercially popular), the effect accounts for 20% of the gauge factor, but in silicon gauges, the contribution of the piezoresistive term is much larger than the geometric terms. This can be seen in the general examples of strain gauges below:

  6. Stress–strain analysis - Wikipedia

    en.wikipedia.org/wiki/Stress–strain_analysis

    Stress–strain analysis (or stress analysis) is an engineering discipline that uses many methods to determine the stresses and strains in materials and structures subjected to forces. In continuum mechanics , stress is a physical quantity that expresses the internal forces that neighboring particles of a continuous material exert on each other ...

  7. Piezoresistive effect - Wikipedia

    en.wikipedia.org/wiki/Piezoresistive_effect

    The piezoresistive effect of semiconductor materials can be several orders of magnitudes larger than the geometrical effect and is present in materials like germanium, polycrystalline silicon, amorphous silicon, silicon carbide, and single crystal silicon. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be built.

  8. File:StrainGaugeVisualization.svg - Wikipedia

    en.wikipedia.org/wiki/File:StrainGauge...

    Main page; Contents; Current events; Random article; About Wikipedia; Contact us; Help; Learn to edit; Community portal; Recent changes; Upload file

  9. Load cell - Wikipedia

    en.wikipedia.org/wiki/Load_cell

    A strain gauge sensor measures the deformation of the elastic element, and the output of the sensor is converted by an electronic circuit to a signal that represents the load. Capacitive strain gauges measure the deformation of the elastic material using the change in capacitance of two plates as the plates move closer to each other.

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