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An unmounted resistive foil strain gauge. A strain gauge takes advantage of the physical property of electrical conductance and its dependence on the conductor's geometry. . When an electrical conductor is stretched within the limits of its elasticity such that it does not break or permanently deform, it will become narrower and longer, which increases its electrical resistance end-to-
A strain gauge, typically glued onto a sample of material to measure its deformation. The blue material is a conductor, so current must flow through the narrow vertical channels. If the gauge is stretched vertically, the channels get longer and narrower. This increases the gauge's electrical resistance, which can be measured to work out the strain.
Carbon doping as low as 0.25% in the N-channel MOSFET source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed silicon nitride layer is another way to create uniaxial tensile strain. As opposed to wafer-level methods of inducing strain on the channel layer ...
In constantan strain gauges (the most commercially popular), the effect accounts for 20% of the gauge factor, but in silicon gauges, the contribution of the piezoresistive term is much larger than the geometric terms. This can be seen in the general examples of strain gauges below:
The piezoresistive effect of semiconductor materials can be several orders of magnitudes larger than the geometrical effect and is present in materials like germanium, polycrystalline silicon, amorphous silicon, silicon carbide, and single crystal silicon. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be built.
A strain gauge sensor measures the deformation of the elastic element, and the output of the sensor is converted by an electronic circuit to a signal that represents the load. Capacitive strain gauges measure the deformation of the elastic material using the change in capacitance of two plates as the plates move closer to each other.
Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain , as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel.
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