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Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
The winning entry paid homage to the gallium arsenide on which the company was founded. *Tri, from the Greek for “a prefix meaning three, thrice, threefold”, and quint, from the Latin for “a set or sequence of five” literally means 3-5. 3-5 refers to the location of the elements gallium and arsenic on the periodic table.
On March 26, 2012, Oclaro, Inc. announced the acquisition of Opnext. The merger between Oclaro and Opnext was approved by shareholders of both companies on July 23, 2012. [10] On September 12, 2013, Oclaro, Inc. announced the sale of their Gallium-Arsenide (GaAs) laser diode business in Zurich to II-VI Incorporated (now Coherent) for $115M. As ...
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1]
Alta Devices was a US-based specialty gallium arsenide (GaAs) PV manufacturer, which claimed to have achieved a solar cell conversion efficiency record of 29.1%, as certified by Germany's Fraunhofer ISE CalLab. [1] [2] [3] The company has ceased operations. [1] [4]
Market-share of thin-film technologies in terms of annual production since 1980. Early research into thin-film solar cells began in the 1970s. In 1970, Zhores Alferov's team at Ioffe Institute created the first gallium arsenide (GaAs) solar cells, later winning the 2000 Nobel prize in Physics for this and other work.
Following are responses from some companies to the announcement of curbs from Aug. 1 on Chinese gallium and germanium exports. * A spokesperson for the Semiconductor Equipment Association of Japan ...
VSC7420XJQ-01 - 10-Port Layer-2 Gigabit Ethernet Switch. Vitesse was one of the early developers of gallium arsenide (GaAs) based integrated circuits. It now offers a line of Ethernet switching products consisting of Carrier Ethernet switch engines for customer-premises equipment, access network equipment, wireless base stations, mobile access equipment, fiber and microwave wireless backhaul ...
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