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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
Organic field-effect transistor (OFET), in which the semiconductor is an organic compound; Ballistic transistor (disambiguation) FETs used to sense the environment Ion-sensitive field-effect transistor (ISFET), to measure ion concentrations in solution, Electrolyte–oxide–semiconductor field-effect transistor (EOSFET), neurochip,
Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes , solar cells , microwave-frequency integrated circuits , and others.
Another type of transistor, the field-effect transistor (FET), operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity.
The HIGFET (heterostructure insulated-gate field-effect transistor) is now used mainly in research. [56] The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping of the active region. The TFET (tunnel field-effect transistor) is based on band-to-band ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
Popular examples of the Mandela effect. Here are some Mandela effect examples that have confused me over the years — and many others too. Grab your friends and see which false memories you may ...
The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.