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p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
From Top to Bottom; Top: hole and electron concentrations through the junction; Second: charge densities; Third: electric field; Bottom: electric potential Figure 3. A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V.
p–n junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 10 15 /cm 3 doping level, leading to built-in potential of ~ 0.59 V. Observe the different quasi-fermi levels for conduction band and valence band in n and p regions (red curves).
Band diagram of PN junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 1×10 15 /cm 3 doping level, leading to built-in potential of ~0.59 V. Reducing depletion width can be inferred from the shrinking charge profile, as fewer dopants are exposed with increasing forward bias.
At the junction of a semiconductor and metal, the bands of the semiconductor are pinned to the metal's Fermi level. At the junction of a conductor and vacuum, the vacuum level (from vacuum electrostatic potential) is set by the material's work function and Fermi level. This also (usually) applies for the junction of a conductor to an insulator.
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
The same mechanism applies to the PIN structure, or p-i-n junction, of a solar cell. In this case, the advantage of using a PIN structure over conventional semiconductor p–n junction is better long-wavelength response of the former. In case of long wavelength irradiation, photons penetrate deep into the cell.