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The GATE is used as a requirement for financial assistance (e.g. scholarships) for a number of programs, though criteria differ by admitting institution. [2] In December 2015, the University Grants Commission and MHRD announced that the scholarship for GATE-qualified master's degree students is increased by 56% from ₹ 8,000 (US$94) per month to ₹ 12,400 (US$150) per month.
A gate driver is a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete module. In essence, a gate driver consists of a level shifter in combination with an ...
It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown.
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Gate [3] (Japanese: ゲート 自衛隊 彼の地にて、斯く戦えり, Hepburn: Gēto: Jieitai Kano Chi nite, Kaku Tatakaeri, lit. Gate: Thus the Japanese Self-Defense Force Fought in Their Land), is a Japanese fantasy novel series written by Takumi Yanai and illustrated by Daisuke Izuka and Kurojishi.
A CMOS transistor NAND element. V dd denotes positive voltage.. In CMOS logic, if both of the A and B inputs are high, then both the NMOS transistors (bottom half of the diagram) will conduct, neither of the PMOS transistors (top half) will conduct, and a conductive path will be established between the output and Vss (ground), bringing the output low.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).