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Negative resistance (voltage controlled) oscillator: Since VCNR ("N" type) devices require a low impedance bias and are stable for load impedances less than r, [103] the ideal oscillator circuit for this device has the form shown at top right, with a voltage source V bias to bias the device into its negative resistance region, and parallel ...
In this type the resistance varies with the applied voltage or current. Negative resistance vs positive resistance: If the I–V curve has a positive slope (increasing to the right) throughout, it represents a positive resistance. An I–V curve that is nonmonotonic (having peaks and valleys) represents a device which has negative resistance.
Passive devices, which have no source of energy, cannot have negative static resistance. However active devices such as transistors or op-amps can synthesize negative static resistance with feedback, and it is used in some circuits such as gyrators. Differential resistance. Also called dynamic, incremental, or small-signal resistance
A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias.
The negative differential resistance, combined with the timing properties of the intermediate layer, is responsible for the diode's largest use: in electronic oscillators at microwave frequencies and above. A microwave oscillator can be created simply by applying a DC voltage to bias the device into its negative resistance region. In effect ...
Illustration of the "reference directions" of the current (), voltage (), and power () variables used in the passive sign convention.If positive current is defined as flowing into the device terminal which is defined to be positive voltage, then positive power (big arrow) given by the equation = represents electric power flowing into the device, and negative power represents power flowing out.
The device has a unique characteristic in that when it is triggered, its emitter current increases regeneratively until it is restricted by the emitter power supply. It exhibits a negative resistance characteristic and so it can be employed as an oscillator. The UJT is biased with a positive voltage between the two bases.
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .