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The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10 nm process in 2013. [120] On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm. [121] TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017. [122]
Model number CPU () Fab CPU (Core/Freq) CPU cache GPU Memory technology Wireless radio technologies Released MT6276M: ARMv6 65 nm : single-core (32-bit) ARM11 (Jazelle) @ 520 MHz
reengineered P6-based microarchitecture used in Intel Core 2 and Xeon microprocessors, built on a 65 nm process, supporting x86-64 level SSE instruction and macro-op fusion and enhanced micro-op fusion with a wider front end and decoder, larger out-of-order core and renamed register, support loop stream detector and large shadow register file.
In CPU fabrications, a die shrink always involves an advance to a lithographic node as defined by ITRS (see list). For GPU and SoC manufacturing, the die shrink often involves shrinking the die on a node not defined by the ITRS, for instance, the 150 nm, 110 nm, 80 nm, 55 nm, 40 nm and more currently 8 nm nodes, sometimes referred to as "half-nodes".
Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated.The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental ...
65 nm 503 8 / 1 2007 TILE64: Tilera: 600–900 MHz 90–45 nm ? 64 / 1 2007 Opteron "Barcelona" AMD: 1.8–3.2 GHz 65 nm 463 4 / 1 2007 PowerPC BGP: IBM: 850 MHz 90 nm 208 4 / 1 2008 Phenom: AMD: 1.8–2.6 GHz 65 nm 450 2, 3, 4 / 1 2008 z10: IBM: 4.4 GHz 65 nm 993 4 / 7 2008 PowerXCell 8i: IBM: 2.8–4.0 GHz 65 nm 250 1+8 / 1 2008 SPARC64 VII ...
The PowerXCell is manufactured on a 65 nm process, and adds support for up to 32 GB of slotted DDR2 memory, as well as dramatically improving double-precision floating-point performance on the SPEs from a peak of about 12.8 GFLOPS to 102.4 GFLOPS total for eight SPEs, which, coincidentally, is the same peak performance as the NEC SX-9 vector ...