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Germanium is created by stellar nucleosynthesis, mostly by the s-process in asymptotic giant branch stars. The s-process is a slow neutron capture of lighter elements inside pulsating red giant stars. [57] Germanium has been detected in some of the most distant stars [58] and in the atmosphere of Jupiter. [59]
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
[7] [14] Due to the surface state problem, germanium was the dominant semiconductor material of choice for transistors and other semiconductor devices in the early semiconductor industry, as germanium was capable of higher carrier mobility. [15] [16] He made a breakthrough with his development of the surface passivation process. [7]
This is an accepted version of this page This is the latest accepted revision, reviewed on 17 November 2024. Development of the table of chemical elements The American chemist Glenn T. Seaborg —after whom the element seaborgium is named—standing in front of a periodic table, May 19, 1950 Part of a series on the Periodic table Periodic table forms 18-column 32-column Alternative and ...
The Portable Document Format (PDF) was created by Adobe Systems, introduced at the Windows and OS/2 Conference in January 1993 and remained a proprietary format until it was released as an open standard in 2008.
The first organogermanium compound, tetraethylgermane, synthesized by Winkler in 1887, [3] by the reaction of germanium tetrachloride with diethylzinc. More commonly, these Ge(IV) compounds are prepared by alkylation of germanium halides by organolithium and Grignard reagents , including surfaces terminated with Ge-Cl bonds. [ 4 ]
An NPN grown-junction transistor with the cover removed to show the germanium ingot and the base wire. The grown-junction transistor was the first type of bipolar junction transistor made. [1] It was invented by William Shockley at Bell Labs on June 23, 1948 [2] (patent filed June 26, 1948), six months after the first bipolar point-contact ...
The critical experiment, carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring. Brattain attached a small strip of gold foil over the point of a plastic triangle—a configuration which is essentially a point-contact diode .