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  2. PIN diode - Wikipedia

    en.wikipedia.org/wiki/PIN_diode

    A PIN diode operates under what is known as high-level injection. In other words, the intrinsic "i" region is flooded with charge carriers from the "p" and "n" regions. In other words, the intrinsic "i" region is flooded with charge carriers from the "p" and "n" regions.

  3. List of electronic component packaging types - Wikipedia

    en.wikipedia.org/wiki/List_of_electronic...

    MELF: Metal electrode leadless face (usually for resistors and diodes) SOD: Small-outline diode. SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads

  4. Laser diode - Wikipedia

    en.wikipedia.org/wiki/Laser_diode

    The laser diode chip removed and placed on the eye of a needle for scale A laser diode with the case cut away. The laser diode chip is the small black chip at the front; a photodiode at the back is used to control output power. SEM (scanning electron microscope) image of a commercial laser diode with its case and window cut away. The anode ...

  5. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    A PIN diode has a central un-doped, or intrinsic, layer, forming a p-type/intrinsic/n-type structure. [42] They are used as radio frequency switches and attenuators. They are also used as large-volume, ionizing-radiation detectors and as photodetectors. PIN diodes are also used in power electronics, as

  6. Jun-ichi Nishizawa - Wikipedia

    en.wikipedia.org/wiki/Jun-ichi_Nishizawa

    Layers of a PIN diode. (+ -) The PIN photodiode was invented by Jun-ichi Nishizawa in 1950. Jun-ichi Nishizawa (西澤 潤一, Nishizawa Jun'ichi, September 12, 1926 – October 21, 2018) [1] was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor ...

  7. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the diode breaks down, and therefore conducts, if the voltage gets any higher.

  8. Carrier generation and recombination - Wikipedia

    en.wikipedia.org/wiki/Carrier_generation_and...

    Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.

  9. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...

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