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There is also a recovery concern: a diode's current will not decrease immediately when switching from forward-biased to reverse-biased, because discharging its stored charge takes a finite amount of time (t rr or reverse recovery time). [1] In a diode OR gate, if two or more of the inputs are high and one switches to low, recovery issues will ...
Degradation of I DSS [12] by gate sinking and hydrogen poisoning. This failure is the most common and easiest to detect, and is affected by reduction of the active channel of the transistor in gate sinking and depletion of the donor density in the active channel for hydrogen poisoning. Degradation in gate leakage current. This occurs at ...
A diode can be formed away from a MOSFET source/drain, for example, with an n+ implant in a p-substrate or with a p+ implant in an n-well. If the diode is connected to metal near the gate(s), it can protect the gate oxide. This can be done only on nets with violations, or on every gate (in general by putting such diodes in every library cell).
Also called CLDs, constant-current diodes, diode-connected transistors, or current-regulating diodes. Crystal rectifiers or crystal diodes These are point-contact diodes. [27] The 1N21 series and others are used in mixer and detector applications in radar and microwave receivers. [24] [25] [26] The 1N34A is another example of a crystal diode. [38]
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric . [ 1 ] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.