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There is also a recovery concern: a diode's current will not decrease immediately when switching from forward-biased to reverse-biased, because discharging its stored charge takes a finite amount of time (t rr or reverse recovery time). [1] In a diode OR gate, if two or more of the inputs are high and one switches to low, recovery issues will ...
Degradation of I DSS [12] by gate sinking and hydrogen poisoning. This failure is the most common and easiest to detect, and is affected by reduction of the active channel of the transistor in gate sinking and depletion of the donor density in the active channel for hydrogen poisoning. Degradation in gate leakage current. This occurs at ...
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
Diode–transistor logic (DTL) is a class of digital circuits that is the direct ancestor of transistor–transistor logic. It is called so because the logic gating functions AND and OR are performed by diode logic , while logical inversion (NOT) and amplification (providing signal restoration) is performed by a transistor (in contrast with ...
Also called CLDs, constant-current diodes, diode-connected transistors, or current-regulating diodes. Crystal rectifiers or crystal diodes These are point-contact diodes. [27] The 1N21 series and others are used in mixer and detector applications in radar and microwave receivers. [24] [25] [26] The 1N34A is another example of a crystal diode. [38]
A schottky diode can be used to minimize the switching losses caused by the reverse recovery of a regular PN diode. [11] The switching losses are proportional to the switching frequency. In a complete real-world buck converter, there is also a command circuit to regulate the output voltage or the inductor current.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric . [ 1 ] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
Diffusion Capacitance is the capacitance that happens due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in a forward biased diode or from emitter to base in a forward-biased junction of a transistor.