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A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.
Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
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The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.
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Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]