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  2. Polycrystalline silicon - Wikipedia

    en.wikipedia.org/wiki/Polycrystalline_silicon

    Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry . Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.

  3. Self-aligned gate - Wikipedia

    en.wikipedia.org/wiki/Self-aligned_gate

    Self-aligned gate. In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and ...

  4. Polysilicon depletion effect - Wikipedia

    en.wikipedia.org/wiki/Polysilicon_depletion_effect

    Polysilicon depletion effect. Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. [1] Because of this variation High-k Dielectric Metal Gates (HKMG) were introduced to solve ...

  5. Interconnect (integrated circuits) - Wikipedia

    en.wikipedia.org/wiki/Interconnect_(integrated...

    Global interconnects can transmit further, such as over large-area sub-circuits. Consequently, local interconnects may be formed from materials with relatively high electrical resistivity such as polycrystalline silicon (sometimes silicided to extend its range) or tungsten. To extend the distance an interconnect may reach, various circuits such ...

  6. Thyristor - Wikipedia

    en.wikipedia.org/wiki/Thyristor

    The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.

  7. Metal gate - Wikipedia

    en.wikipedia.org/wiki/Metal_gate

    A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s, the "M" for metal has been replaced by polysilicon, but the name remained.

  8. Flip-flop (electronics) - Wikipedia

    en.wikipedia.org/wiki/Flip-flop_(electronics)

    Flip-flop (electronics) A SR latch ( R1, R2 = 1 kΩ; R3, R4 = 10 kΩ) In electronics, flip-flops and latches are circuits that have two stable states that can store state information – a bistable multivibrator. The circuit can be made to change state by signals applied to one or more control inputs and will output its state (often along with ...

  9. Depletion-load NMOS logic - Wikipedia

    en.wikipedia.org/wiki/Depletion-load_NMOS_logic

    Depletion-load NMOS logic. In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS (n-type metal-oxide semiconductor) logic families that needed more than one different power supply voltage. Although manufacturing these integrated circuits required ...

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