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Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on ...
SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were manufactured by Toshiba, SanDisk and SK Hynix. [30 ...
Flash memory was invented by Fujio Masuoka at Toshiba in 1980. [30] [31] Masuoka and his colleagues presented the invention of NOR flash in 1984, [32] and then NAND flash in 1987. [33] Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996.
Flash memory devices use two different technologies—NOR and NAND—to map data. NOR flash provides high-speed random access, reading and writing data in specific memory locations; it can retrieve as little as a single byte. NAND flash reads and writes sequentially at high speed, handling data in blocks.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
In a semiconductor memory chip, each bit of binary data is stored in a tiny circuit called a memory cell consisting of one to several transistors. The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address.
Others – 8.7% Note: SK Hynix acquired Intel's NAND business at the end of 2021 [27] Kioxia spun out and got renamed of Toshiba in 2018/2019. [28] Samsung remains the largest NAND flash memory manufacturer as of second quarter 2023. [29]
Micron Technology, Inc. Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand.
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