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Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on ...
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
The ONFI consortium included manufacturers of NAND flash memory such as Hynix, Intel, Micron Technology, Phison, Western Digital, Sony and Spansion. [2] Samsung, the world's largest manufacturer of NAND flash, was absent in 2006. [8] Vendors of NAND flash-based consumer electronics and computing products are also members.
Zoned Storage is a storage technology set that can reduces write amplification and product cost. It divide the storage device to many zones (usually the block of flash memory), and allow operating system (OS) to write data sequently on zones. It requires the modification of OS, and it needs the device (such as SSD) to support this feature.
Multi-level cell. In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus ...
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells ...
Flash memory was invented by Fujio Masuoka at Toshiba in 1980. [30] [31] Masuoka and his colleagues presented the invention of NOR flash in 1984, [32] and then NAND flash in 1987. [33] Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996.
NOR flash replacement. While flash memory remains one of the most popular storages in embedded systems because of its non-volatility, shock-resistance, small size, and low energy consumption, its application has grown much beyond its original design. Based on its original design, NOR flash memory is designed to store binary code of programs ...