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n/a Ensembl n/a n/a UniProt n a n/a RefSeq (mRNA) n/a n/a RefSeq (protein) n/a n/a Location (UCSC) n/a n/a PubMed search n/a n/a Wikidata View/Edit Human Purine nucleoside phosphorylase, PNP, PNPase or inosine phosphorylase (EC 2.4.2.1) is an enzyme that in humans is encoded by the NP gene. It catalyzes the chemical reaction purine nucleoside + phosphate ⇌ {\displaystyle \rightleftharpoons ...
A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load. This kind of amplifier can enhance ...
Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
For decades the quasi-complementary output stage made sense; but because PNP and NPN power transistors are now equally available and have more closely matched performance characteristics, modern audio power amplifiers often use equivalent topologies for both pairs: either 2 Darlingtons or 2 Sziklai pairs. [3] [4]
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.
The Type 575 Transistor-Curve Tracer displays the dynamic characteristic curves of both NPN and PNP transistors on the screen of a 5-inch cathode-ray tube. Several different transistor characteristic curves may be displayed, including the collector family in the common-base and common emitter configuration.
In the circuit shown, the NPN emitter-follower and the PNP emitter-follower will generally have very slightly different voltage gains, leading to slightly different gains above and below ground. Other more subtle forms of crossover distortion, stemming from slight differences between the PNP and NPN devices, exist.
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...