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In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates.
An 8-plate 160 V 450 mA Federal brand selenium rectifier. A selenium rectifier is a type of metal rectifier, invented in 1933. [1] They were used in power supplies for electronic equipment and in high-current battery-charger applications until they were superseded by silicon diode rectifiers in the late 1960s.
1N4001 diode in DO-41 axial package (through hole mount) A schematic symbol for general-purpose silicon rectifier diodes Current-voltage characteristics of a 1N4001 at different temperatures The 1N400x (or 1N4001 or 1N4000 [ 1 ] ) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for ...
Diode logic (or diode-resistor logic) constructs AND and OR logic gates with diodes and resistors. An active device ( vacuum tubes with control grids in early electronic computers , then transistors in diode–transistor logic ) is additionally required to provide logical inversion (NOT) for functional completeness and amplification for voltage ...
A diode's high resistance to current flowing in the reverse direction suddenly drops to a low resistance when the reverse voltage across the diode reaches a value called the breakdown voltage. This effect is used to regulate voltage ( Zener diodes ) or to protect circuits from high voltage surges ( avalanche diodes ).
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The steps for solving an Electromagnetic problem as a bond graph are as follows: Place an 0-junction at each node; Insert Sources, R, I, C, TR, and GY bonds with 1 junctions; Ground (both sides if a transformer or gyrator is present) Assign power flow direction; Simplify; These steps are shown more clearly in the examples below.
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.