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It is somewhat crude to suggest that the metal-induced gap states (MIGS) are tail ends of metal states that leak into the semiconductor.Since the mid-gap states do exist within some depth of the semiconductor, they must be a mixture (a Fourier series) of valence and conduction band states from the bulk.
The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
This model includes a dipole layer at the interface between the two semiconductors which arises from electron tunneling from the conduction band of one material into the gap of the other (analogous to metal-induced gap states). This model agrees well with systems where both materials are closely lattice matched [11] such as GaAs/AlGaAs.
If there is a state at the Fermi level (ϵ = μ), then this state will have a 50% chance of being occupied. The distribution is plotted in the left figure. The closer f is to 1, the higher chance this state is occupied. The closer f is to 0, the higher chance this state is empty.
For binuclear reductive elimination, the oxidation state of each metal decreases by one, while the d-electron count of each metal increases by one. This type of reactivity is generally seen with first row metals, which prefer a one-unit change in oxidation state, but has been observed in both second and third row metals.
This is very similar to a true 'gap', which is an energy range that contains no allowed states. Such gaps open up, for example, when electrons interact with the lattice. The pseudogap phenomenon is observed in a region of the phase diagram generic to cuprate high-temperature superconductors, existing in underdoped specimens at temperatures ...
The transition state of the latter reactions has to meet structural and energetic conditions, redox reactions have only to comply to the energy requirement. Whereas the geometry of the transition state in the other reactions is the same for all pairs of reactants, for redox pairs many polarization environments may meet the energetic conditions.
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