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On 9 January 2017, SK Hynix announced 8 and 16 GB LPDDR4X packages. [ 23 ] [ 24 ] JEDEC published the LPDDR4X standard on 8 March 2017. [ 25 ] Aside from the lower voltage, additional improvements include a single-channel die option for smaller applications, new MCP, PoP and IoT packages, and additional definition and timing improvements for ...
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
Video random-access memory (VRAM) is dedicated computer memory used to store the pixels and other graphics data as a framebuffer to be rendered on a computer monitor. [1] It often uses a different technology than other computer memory, in order to be read quickly for display on a screen.
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16 GB Subcompact (15 mm × 12.5 mm × 1.2 mm), optional DRM, up to 16 GB Sony PS Vita Memory Card 2012 64 GB Subcompact (15 mm × 12.5 mm × 1.6 mm [7]), compulsory DRM, up to 64 GB, proprietary (can be used on PS Vita only) P2 (storage media) Panasonic MicroP2: 2012 64 GB
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.
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Both Wide I/O 2 and HBM utilize a very wide parallel memory interface—up to 512 bits for Wide I/O 2 compared to 64 bits for DDR4—although they operate at lower frequencies than DDR4. Wide I/O 2 is designed for high-performance, compact devices, often integrated into processors or system on a chip (SoC) packages.
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