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  2. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Some wet etchants etch crystalline materials at very different rates depending upon which crystal face is exposed. In single-crystal materials (e.g. silicon wafers), this effect can allow very high anisotropy, as shown in the figure. The term "crystallographic etching" is synonymous with "anisotropic etching along crystal planes".

  3. Bulk micromachining - Wikipedia

    en.wikipedia.org/wiki/Bulk_micromachining

    Like surface micromachining, bulk micromachining can be performed with wet or dry etches, although the most common etch in silicon is the anisotropic wet etch. This etch takes advantage of the fact that silicon has a crystal structure, which means its atoms are all arranged periodically in lines and planes. Certain planes have weaker bonds and ...

  4. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios .

  5. Metal assisted chemical etching - Wikipedia

    en.wikipedia.org/.../Metal_assisted_chemical_etching

    The reason why MACE is heavily researched is that it allows completely anisotropic etching of silicon substrates which is not possible with other wet chemical etching methods (see figure to the right). Usually the silicon substrate is covered with a protective layer such as photoresist before it is immersed in an etching solution. The etching ...

  6. Photolithography - Wikipedia

    en.wikipedia.org/wiki/Photolithography

    In etching, a liquid ("wet") or plasma ("dry") chemical agent removes the uppermost layer of the substrate in the areas that are not protected by photoresist. In semiconductor fabrication, dry etching techniques are generally used, as they can be made anisotropic, in order to avoid significant undercutting of the photoresist pattern. This is ...

  7. Reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Reactive-ion_etching

    Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching . RIE uses chemically reactive plasma to remove material deposited on wafers .

  8. Plasma etching - Wikipedia

    en.wikipedia.org/wiki/Plasma_etching

    Plasma etching can change the surface contact angles, such as hydrophilic to hydrophobic, or vice versa. Argon plasma etching has reported to enhance contact angle from 52 deg to 68 deg, [7] and, Oxygen plasma etching to reduce contact angle from 52 deg to 19 deg for CFRP composites for bone plate applications. Plasma etching has been reported ...

  9. MEMS - Wikipedia

    en.wikipedia.org/wiki/MEMS

    Boron is the most common etch-stop dopant. In combination with wet anisotropic etching as described above, ECE has been used successfully for controlling silicon diaphragm thickness in commercial piezoresistive silicon pressure sensors. Selectively doped regions can be created either by implantation, diffusion, or epitaxial deposition of silicon.

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