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The first etching processes used liquid-phase ("wet") etchants. This process is now largely outdated but was used up until the late 1980s when it was superseded by dry plasma etching. [1]: 147 The wafer can be immersed in a bath of etchant, which must be agitated to achieve good process control. For instance, buffered hydrofluoric acid (BHF) is ...
Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. It is a mixture of a buffering agent, such as ammonium fluoride NH 4 F, and hydrofluoric acid (HF). Its primary use is in etching thin films of silicon nitride (Si 3 N 4) or silicon dioxide (SiO 2), by the reaction: SiO 2 + 4HF + 2NH 4 F → ...
Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles.
Wet etching was widely used in the 1960s and 1970s, [144] [145] but it was replaced by dry etching/plasma etching starting at the 10 micron to 3 micron nodes. [146] [147] This is because wet etching makes undercuts (etching under mask layers or resist layers with patterns). [148] [149] [150] Dry etching has become the dominant etching technique ...
Like surface micromachining, bulk micromachining can be performed with wet or dry etches, although the most common etch in silicon is the anisotropic wet etch. This etch takes advantage of the fact that silicon has a crystal structure, which means its atoms are all arranged periodically in lines and planes. Certain planes have weaker bonds and ...
The wet etching of SiO 2 in buffered hydrogen fluoride solutions is a common and well understood process in micro fabrication. In 1966, Holmes and Snell found that SiO 2 can be etched in hydrogen fluoride vapor. [2]
However, from 1880 to 1950 a photo-mechanical ("line-block") variant was the dominant form of commercial printing for images. A similar process to etching, but printed as a relief print, so it is the "white" background areas which are exposed to the acid, and the areas to print "black" which are covered with ground. Blake's exact technique ...
It is also widely employed in wet etching of wafers in the semiconductor fabrication process. [1] In the laboratory, this solution is sometimes used to clean glassware, though it is discouraged in many institutions and it should not be used routinely due to its dangers. [10]
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