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  2. Doping (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Doping_(semiconductor)

    Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.

  3. Dopant - Wikipedia

    en.wikipedia.org/wiki/Dopant

    The addition of a dopant to a semiconductor, known as doping, has the effect of shifting the Fermi levels within the material. [ citation needed ] This results in a material with predominantly negative ( n-type ) or positive ( p-type ) charge carriers depending on the dopant variety.

  4. Dopant activation - Wikipedia

    en.wikipedia.org/wiki/Dopant_Activation

    Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.

  5. Acceptor (semiconductors) - Wikipedia

    en.wikipedia.org/wiki/Acceptor_(semiconductors)

    In semiconductor physics, an acceptor is a dopant atom that when substituted into a semiconductor lattice forms a p-type region. Boron atom acting as an acceptor in the simplified 2D silicon lattice. When silicon (Si), having four valence electrons , is doped with elements from group III of the periodic table , such as boron (B) and aluminium ...

  6. Extrinsic semiconductor - Wikipedia

    en.wikipedia.org/wiki/Extrinsic_semiconductor

    A common dopant for n-type silicon is phosphorus or arsenic. In an n-type semiconductor, the Fermi level is greater than that of the intrinsic semiconductor and lies closer to the conduction band than the valence band. Examples: phosphorus, arsenic, antimony, etc.

  7. Ion implantation - Wikipedia

    en.wikipedia.org/wiki/Ion_implantation

    Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...

  8. Donor (semiconductors) - Wikipedia

    en.wikipedia.org/wiki/Donor_(semiconductors)

    In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...

  9. Semiconductor - Wikipedia

    en.wikipedia.org/wiki/Semiconductor

    A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] ... or dopant, added to an intrinsic ...

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