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A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. [1] It has low noise, low distortion, high audio frequency power capability.
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT). [ 1 ]
A Voltage controller thyristor based dimmer rack An electrical schematic for a typical SCR-based light dimmer. A voltage controller, also called an AC voltage controller or AC regulator is an electronic module based on either thyristors, triodes for alternating current, silicon-controlled rectifiers or insulated-gate bipolar transistors, which converts a fixed voltage, fixed frequency ...
The wafer device is similar to a gate turn-off thyristor (GTO). They can be turned on and off by a gate signal, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications. The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn-off current is greater than the anode ...
MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. [ 1 ] The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element.
The current in the TCR is varied from maximum (determined by the connection voltage and the inductance of the reactor) to almost zero by varying the "Firing Delay Angle", α. α is defined as the delay angle from the point at which the voltage becomes positive to the point at which the thyristor valve is turned on and current starts to flow.
Later, Hans W. Becke and Carl F. Wheatley developed a similar device claiming non-latch-up. They patented the device in 1980, referring to it as "power MOSFET with an anode region" for which "no thyristor action occurs under any device operating conditions". [17] [18] A. Nakagawa et al. invented the device design concept of non-latch-up IGBTs ...