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Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.
To understand how band structure changes relative to the Fermi level in real space, a band structure plot is often first simplified in the form of a band diagram. In a band diagram the vertical axis is energy while the horizontal axis represents real space. Horizontal lines represent energy levels, while blocks represent energy bands.
Here, height is energy while width is the density of available states for a certain energy in the material listed. The shade follows the Fermi–Dirac distribution (black: all states filled, white: no state filled). In metals and semimetals the Fermi level E F lies inside at least one band.
The unpaired electrons in the dangling bonds of the surface atoms interact with each other to form an electronic state with a narrow energy band, located somewhere within the band gap of the bulk material. For simplicity, the surface state band is assumed to be half-filled with its Fermi level located at the mid-gap energy of the bulk.
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
Band diagram of semiconductor-vacuum interface showing electron affinity E EA, defined as the difference between near-surface vacuum energy E vac, and near-surface conduction band edge E C. Also shown: Fermi level E F, valence band edge E V, work function W.
is the w:conduction band, indicates the quasi-w:fermi energy levels, is the intrinsic Fermi level of the undoped semiconductor, and is the w:valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.