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In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates .
Reliability of a semiconductor device is the ability of the device to perform its intended function during the life of the device in the field. There are multiple considerations that need to be accounted for when developing reliable semiconductor devices: Semiconductor devices are very sensitive to impurities and particles. Therefore, to ...
A low constant failure rate which is random in nature. Wear out failures are increasing failures due to aging semiconductor degradation mechanisms. TDDB is one of the intrinsic wear out failure mechanisms. Performance of the IC components can be evaluated for semiconductor wear out mechanisms including TDDB for any given operating conditions.
The IC is usually monitored under stress and tested at intermediate intervals. This reliability stress test is sometimes referred to as a lifetime test, device life test or extended burn in test and is used to trigger potential failure modes and assess IC lifetime. There are several types of HTOL:
Failure cause and/or mechanism Defects in requirements, design, process, quality control, handling or part application, which are the underlying cause or sequence of causes that initiate a process (mechanism) that leads to a failure mode over a certain time. A failure mode may have more causes.
An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and their variation in the manufacturing processes ...
This greater energy affects the mobility of charge carriers and as a consequence affects how they travel through a semiconductor device. [3] Hot electrons can tunnel out of the semiconductor material, instead of recombining with a hole or being conducted through the material to a collector. Consequent effects include increased leakage current ...
A design failure modes and effects analysis, DFMEA, is a structured qualitative analysis of a system, subsystem, device design to identify potential failure modes and their effects on correct operation. The concept and practice of performing a DFMEA, has been around in some form since the 1960s.