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All diodes exhibit this variable junction capacitance, but varactors are manufactured to exploit the effect and increase the capacitance variation. The figure shows an example of a cross section of a varactor with the depletion layer formed of a p–n junction.
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
Any reverse-biased semiconductor diode displays a measure of voltage-dependent capacitance and can be used to change the frequency of an oscillator by varying a control voltage applied to the diode. Special-purpose variable-capacitance varactor diodes are available with well-characterized wide-ranging values of capacitance. A varactor is used ...
The thickness of the depletion layer of a reverse-biased semiconductor diode varies with the DC voltage applied across the diode. Any diode exhibits this effect (including p/n junctions in transistors), but devices specifically sold as variable capacitance diodes (also called varactors or varicaps ) are designed with a large junction area and a ...
The classical varactor parametric oscillator consists of a semiconductor varactor diode connected to a resonant circuit or cavity resonator. It is driven by varying the diode's capacitance by applying a varying bias voltage. The circuit that varies the diode's capacitance is called the "pump" or "driver".
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias.
When a small voltage is applied across the electrodes, only a tiny current flows, caused by reverse leakage through the diode junctions. When a large voltage is applied, the diode junction breaks down due to a combination of thermionic emission and electron tunneling, resulting in a large current flow. The result of this behavior is a nonlinear ...