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Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips.
Silicon tetrachloride is manufactured on a huge scale as a precursor to the production of pure silicon, silicon dioxide, and some silicon esters. [11] The silicon tetrahalides hydrolyse readily in water, unlike the carbon tetrahalides, again because of the larger size of the silicon atom rendering it more open to nucleophilic attack and the ...
In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide.Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law.
The semiconductor used for carrier generation has usually a band-gap smaller than the photon energy, and the most common choice is pure germanium. [ 25 ] [ 26 ] Most detectors use a p–n junction for carrier extraction, however, detectors based on metal–semiconductor junctions (with germanium as the semiconductor) have been integrated into ...