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The silicon carbide near the outer walls of the crucible sublimes and is deposited on a graphite rod near the center of the crucible, which is at a lower temperature. [2] Several modified versions of the Lely process exist, most commonly the silicon carbide is heated from the bottom end rather than the walls of the crucible, and deposited on ...
Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
Silicon carbide was a useful material in jewelry making due to its abrasive properties, and this was the first commercial application of the Acheson process. [ 3 ] In the 1940s, first the Manhattan Project and then the Soviet atomic bomb project adopted Acheson process for nuclear graphite manufacturing (see details there).
When silicon is grown by the Czochralski method, the melt is contained in a silica crucible. During growth, the walls of the crucible dissolve into the melt and Czochralski silicon therefore contains oxygen at a typical concentration of 10 18 cm −3. Oxygen impurities can have beneficial or detrimental effects.
In general, multiple crucibles will be placed inside an electric furnace fitted with silicon carbide heating elements, and heated to between 1,000 and 1,200 °C. The temperature required, and the type of flux used, are dependent on the composition of the rock in which the precious metals are concentrated, and in many laboratories an empirical ...
A modern crucible used in the production of silicon ingots via the Czochralski process Smaller clay graphite crucibles for copper alloy melting. A crucible is a container in which metals or other substances may be melted or subjected to very high temperatures.
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