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List of free analog and digital electronic circuit simulators, available for Windows, macOS, Linux, and comparing against UC Berkeley SPICE. The following table is split into two groups based on whether it has a graphical visual interface or not.
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example).
MOSFET (PMOS and NMOS) demonstrations Date Channel length Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm ...
The DGMOSFET (dual-gate MOSFET) or DGMOS, a MOSFET with two insulated gates. The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation.
Cross section of a MOSFET operating in the saturation region. Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance.
A MOSFET can be made to operate as a resistor, so the whole circuit can be made with n-channel MOSFETs only. NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitive charge at the output drains away very quickly (similar to discharging a capacitor ...
Transistor models are used for almost all modern electronic design work. Analog circuit simulators such as SPICE use models to predict the behavior of a design. Most design work is related to integrated circuit designs which have a very large tooling cost, primarily for the photomasks used to create the devices, and there is a large economic incentive to get the design working without any ...