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The insight was the catalyst for DRAM — Dennard’s most important innovation. [3] In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH ...
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu IBM T.J. Watson Research Center ... Samsung Electronics have begun risk production of 3 nm GAAFET transistors in ...
In 1967, Robert H. Dennard of IBM filed a patent for a single-transistor DRAM (dynamic RAM) memory cell, using a MOSFET. [ 95 ] The earliest practical application of floating-gate MOSFET (FGMOS) was floating-gate memory cells, which Dawon Kahng and Simon Sze proposed could be used to produce reprogrammable ROM ( read-only memory ). [ 96 ]
In 1974, Robert H. Dennard at IBM recognized the rapid MOSFET scaling technology and formulated what became known as Dennard scaling, which describes that as MOS transistors get smaller, their power density stays constant such that the power use remains in proportion with area.
The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometers wide. The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974. [3]
In 1966, Dr. Robert Dennard invented modern DRAM architecture in which there's a single MOS transistor per capacitor, [11] at the IBM Thomas J. Watson Research Center, while he was working on MOS memory and was trying to create an alternative to SRAM which required six MOS transistors for each bit of data. While examining the characteristics of ...
Moore's law, which he described in 1965, and which was later named after him, [21] predicted that the number of transistors on an IC for minimum component cost would double every 18 months. [contradictory] [6] [7] In 1974, Robert H. Dennard at IBM recognized the rapid MOSFET scaling technology and formulated the related Dennard scaling rule.