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SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
low SCR: in case of a short circuit, the current is proportional to SCR, therefore generators with low SCR require less protection and thus are cheaper; low SCR allows shorter air gap and lower excitation field, both decreasing the size (an cost) of the generator; with low SCR the amounts of iron and copper are reduced, lowering the cost; high SCR:
The SCR can be calculated for each point on an electrical grid. A point on a grid having a number of machines with an SCR above a number between 1 and 1.5 has less vulnerability to voltage instability. Hence, such a grid is known strong grid or power system. A power system (grid) having a lower SCR has more vulnerability to grid voltage ...
Like an SCR, when a voltage pulse is present on the gate terminal, the device turns on. The main difference between an SCR and a Triac is that both the positive and negative cycle can be turned on independently of each other, using a positive or negative gate pulse. Similar to an SCR, once the device is turned on, the device cannot be turned off.
A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
In AC circuits, SCR or triac relays inherently switch off at the points of AC zero cross when there is zero load current. The circuit will never be interrupted in the middle of a sine wave peak, preventing the large transient voltages that would otherwise occur due to the sudden collapse of the magnetic field around the inductance.
The VI characteristics of typical STATCOM. As a STATCOM's VSC operation is based on changing current flow to affect voltage, its voltage-current (VI) characteristics control how it operates. [23] The VI characteristic can be divided into two distinct parts: a slopped region between its inductive and capacitive maximums, and its maximum ...
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.