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English: Circuit diagram of an SRAM cell, built with six MOSFETs. The bulk connection of all transistors is to ground, but is not shown from simplicity. The bulk connection of all transistors is to ground, but is not shown from simplicity.
English: Circuit diagram of an SRAM cell, built with four MOSFETs and two resisitors. The bulk connection of all transistors is to ground, but is not shown from simplicity. The bulk connection of all transistors is to ground, but is not shown from simplicity.
A six-transistor (6T) CMOS SRAM cell. WL: word line. BL: bit line. A typical SRAM cell is made up of six MOSFETs, and is often called a 6T SRAM cell. Each bit in the cell is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1.
SRAM typically has six-transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells. [17] [15] In 1965, Toshiba's Toscal BC-1411 electronic calculator used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
NEC's 64 kb SRAM memory chip in 1981. [47] Intel 80286 CPU launched in 1982. The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Alice that were manufactured using a 1.5 μm CMOS process. [99]
The PMOS transistor's channel is in a low resistance state, connecting Vdd to Q. Q, therefore, registers Vdd. On the other hand, when the voltage of A is high (i.e. close to Vdd), the PMOS transistor is in a high resistance state, disconnecting Vdd from Q. The NMOS transistor is in a low resistance state, connecting Vss to Q. Now, Q registers Vss.
Static random-access memory (SRAM) is electronic memory that does not require refreshing. [2] An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a ...