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Drawing of a tape-automated bonding carrier and definitions of various parts of the TAB assembly. Tape-automated bonding (TAB) is a process that places bare semiconductor chips (dies) like integrated circuits onto a flexible circuit board (FPC) by attaching them to fine conductors in a polyamide or polyimide (like trade names Kapton or UPILEX) film carrier.
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces.
Michel-Lévy interference colour chart issued by Zeiss Microscopy. In optical mineralogy, an interference colour chart, also known as the Michel-Levy chart, is a tool first developed by Auguste Michel-Lévy to identify minerals in thin section using a petrographic microscope.
The exact positioning of the screen print structures to the cap wafer are required to ensure an accurate bond. The bonded structures are, dependent on the wettability of the printed surface, 10 to 20% wider than the designed screen. [5] To ensure a uniform glass thickness, all structures should have the same width.
Compared to Al or Cu, it does not form an oxide. This allows to skip a surface cleaning procedure before bonding. [1] Copper has the disadvantage that the damascene process is very extensive. [5] It also immediately forms a surface oxide which can, however, be removed by formic acid vapor cleaning. Oxide removal doubles as surface passivation.
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3D areal surface texture parameters are written with the capital letter S (or V) followed by a suffix of one or two small letters. They are calculated on the entire surface and no more by averaging estimations calculated on a number of base lengths, as is the case for 2D parameters.
The decrease of temperature is based on the increase of bonding strength using plasma activation on clean wafer surfaces. Further, the increase is caused by elevation in amount of Si-OH groups, removal of contaminants on the wafer surface, the enhancement of viscous flow of the surface layer and the enhanced diffusivity of water and gas trapped at the interface. [2]
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