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  2. GDDR6 SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR6_SDRAM

    At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.

  3. DDR5 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR5_SDRAM

    The reduced bus width is compensated by a doubled minimum burst length of 16, which preserves the minimum access size of 64 bytes, which matches the cache line size used by modern x86 microprocessors. [17] DDR5 also decreased the refresh rate to 32 ms from 64 ms when operating above 85°C. It also provides two refresh commands: REFab and REFsb.

  4. Random-access memory - Wikipedia

    en.wikipedia.org/wiki/Random-access_memory

    The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six- transistor memory cell , typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM.

  5. LPDDR - Wikipedia

    en.wikipedia.org/wiki/LPDDR

    On 9 January 2017, SK Hynix announced 8 and 16 GB LPDDR4X packages. [ 23 ] [ 24 ] JEDEC published the LPDDR4X standard on 8 March 2017. [ 25 ] Aside from the lower voltage, additional improvements include a single-channel die option for smaller applications, new MCP, PoP and IoT packages, and additional definition and timing improvements for ...

  6. Comparison of memory cards - Wikipedia

    en.wikipedia.org/wiki/Comparison_of_memory_cards

    16 GB Subcompact (15 mm × 12.5 mm × 1.2 mm), optional DRM, up to 16 GB Sony PS Vita Memory Card 2012 64 GB Subcompact (15 mm × 12.5 mm × 1.6 mm [7]), compulsory DRM, up to 64 GB, proprietary (can be used on PS Vita only) P2 (storage media) Panasonic MicroP2: 2012 64 GB

  7. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

  8. Orders of magnitude (data) - Wikipedia

    en.wikipedia.org/wiki/Orders_of_magnitude_(data)

    5 bits – the size of code points in the Baudot code, used in telex communication (a.k.a. pentad) 6 bits – the size of code points in Univac Fieldata, in IBM "BCD" format, and in Braille. Enough to uniquely identify one codon of genetic code. The size of code points in Base64; thus, often the entropy per character in a randomly-generated ...

  9. Fully Buffered DIMM - Wikipedia

    en.wikipedia.org/wiki/Fully_Buffered_DIMM

    Memory controller with differential serial connections to DDR2 FB-DIMMs. The AMB is visible in the center of each DIMM. A Fully Buffered DIMM (FB-DIMM) is a type of memory module used in computer systems.