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When more accuracy is desired in modelling the diode's turn-on characteristic, the model can be enhanced by doubling-up the standard PWL-model. This model uses two piecewise-linear diodes in parallel, as a way to model a single diode more accurately. PWL Diode model with 2 branches. The top branch has a lower forward-voltage and a higher ...
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation. The Shockley equation doesn't model noise (such as Johnson–Nyquist noise from the internal resistance, or shot noise).
Semiconductor device modeling creates models for the behavior of semiconductor devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally ...
This method, in practical terms, is non-destructive since only a very small amount of the analyte is consumed at the two-dimensional surface of the working and auxiliary electrodes. In practice, the analyte solution is usually disposed of since it is difficult to separate the analyte from the bulk electrolyte , and the experiment requires a ...
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
The characteristic curve (curved line), representing the current I through the diode for any given voltage across the diode V D, is an exponential curve. The load line (diagonal line) , representing the relationship between current and voltage due to Kirchhoff's voltage law applied to the resistor and voltage source, is