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Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging.NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET.
A nanowire MOSFET's current–voltage characteristic (left, using logarithmic y-axis) and a simulation of the electron density (right) forming a conductive inversion channel which connects at the ~0.45 V threshold voltage. Extremely little current flows below this voltage.
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
[1] The amount of subthreshold conduction in a transistor is set by its threshold voltage , which is the minimum gate voltage required to switch the device between on and off states. However, as the drain current in a MOS device varies exponentially with gate voltage, the conduction does not immediately become zero when the threshold voltage is ...
Where is the thermal conductivity, is the density of the medium, is the specific heat, =, the thermal diffusivity and is the rate of heat generation per unit volume. Heat diffuses from the source following the above equation and solution in an homogeneous medium follows a Gaussian distribution.
Therefore, a plot of drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately log-linear behaviour in this MOSFET operating regime. Its slope is the subthreshold slope. The subthreshold slope is also the reciprocal value of the subthreshold swing S s-th which is usually given as: [1]