Search results
Results from the WOW.Com Content Network
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.
Wet etching was widely used in the 1960s and 1970s, [144] [145] but it was replaced by dry etching/plasma etching starting at the 10 micron to 3 micron nodes. [146] [147] This is because wet etching makes undercuts (etching under mask layers or resist layers with patterns). [148] [149] [150] Dry etching has become the dominant etching technique ...
This process is now largely outdated but was used up until the late 1980s when it was superseded by dry plasma etching. [1]: 147 The wafer can be immersed in a bath of etchant, which must be agitated to achieve good process control. For instance, buffered hydrofluoric acid (BHF) is used commonly to etch silicon dioxide over a silicon substrate.
Deep reactive-ion etching. Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which ...
A reactive-ion etching setup in a laboratory cleanroom. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum ...
The general etch reaction is summarized by the following equation. 2 XeF 2 + Si → SiF 4 + 2 Xe. The detailed etch kinetic is more complex reaction consisting of four steps. [15] [16] After the etchant has been mass transported to the silicon surface, the xenon difluoride is absorbed on the silicon surface. 2 XeF 2 (gas) + Si (s) → 2 XeF 2 ...
Photolithography. Photolithography (also known as optical lithography) is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a substrate, typically a silicon wafer. The process begins with a photosensitive material, called a photoresist, being applied to the substrate.
A plasma etcher, or etching tool, is a tool used in the production of semiconductor devices. A plasma etcher produces a plasma from a process gas, typically oxygen or a fluorine -bearing gas, using a high frequency electric field, typically 13.56 MHz. A silicon wafer is placed in the plasma etcher, and the air is evacuated from the process ...