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Memory bandwidth is the rate at which data can be read from or stored into a semiconductor memory by a processor. Memory bandwidth is usually expressed in units of bytes/second , though this can vary for systems with natural data sizes that are not a multiple of the commonly used 8-bit bytes.
A second performance advantage relates to the 3T1C cell's separate transistors for reading and writing; the memory controller can exploit this feature to perform atomic read-modify-writes, where a value is read, modified, and then written back as a single, indivisible operation (Jacob, p. 459).
The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory.
Prior to the development of integrated read-only memory (ROM) circuits, permanent (or read-only) random-access memory was often constructed using diode matrices driven by address decoders, or specially wound core rope memory planes. [citation needed] Semiconductor memory appeared in the 1960s with bipolar memory, which used bipolar transistors ...
The ordering, however, depends on the requested address, and the configured burst type option: sequential or interleaved. Typically, a memory controller will require one or the other. When the burst length is one or two, the burst type does not matter. For a burst length of one, the requested word is the only word accessed.
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
In a single-channel configuration, only one module at a time can transfer information to the CPU. In multi-channel configurations, multiple modules can transfer information to the CPU at the same time, in parallel. FPM, EDO, SDR, and RDRAM memory was not commonly installed in a dual-channel configuration.