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The conversion procedure for some units (for example, the Mach unit of speed) are built into Module:Convert as they are too complex to be specified in a table. That is indicated by entering a code (which must be the same as used in the module) in the Extra column.
A teaspoonful has been considered equal to one fluid dram for medical prescriptions. [19] However, by 1876 the teaspoon had grown considerably larger than it was previously, measuring 80–85 minims. [20] As there are 60 minims in a fluid dram, [5]: C-5, C-7 using this equivalent for the dosage of medicine was no longer suitable. [20]
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DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth ...
Stub Series Terminated Logic (SSTL) is a group of electrical standards for driving transmission lines commonly used with DRAM based DDR memory IC's and memory modules. SSTL is primarily designed for driving the DDR (double-data-rate) SDRAM modules used in computer memory; however, it is also used in other applications, notably some PCI Express PHYs and other high-speed devices.
Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994. [47] NEC's 1 Gb DRAM memory chip in 1995. [47] Hitachi's 128 Mb NAND flash memory chip in 1996. [47] DEC Alpha 21264A, which was made commercially available in 1999. AMD K6-2 Chomper and ...
The structure providing the capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell. They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell.