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A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The connections are illustrated in the adjacent diagram. Because the p-type material is now connected to the negative terminal of the power supply, the ' holes ' in the p-type material are pulled away from the junction, leaving behind charged ions and causing the width of the depletion region to increase.
An optical sensor converts light rays into electronic signals. It measures the physical quantity of light and then translates it into a form readable by an instrument. An optical sensor is generally part of a larger system that integrates a source of light, a measuring device, and the optical sensor. This is often connected to an electrical ...
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...
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The passive-pixel sensor (PPS) is a type of photodiode array. It was the precursor to the active-pixel sensor (APS). [20] A passive-pixel sensor consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch. [24]