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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
The Sinclair Executive was the world's first "slimline" pocket calculator, and the first to be produced by Clive Sinclair's company Sinclair Radionics.Introduced in 1972, the calculator was produced in at least two versions with different keyboard markings; a variant called the Sinclair Executive Memory was introduced in 1973.
Computational RAM (C-RAM) is random-access memory with processing elements integrated on the same chip. This enables C-RAM to be used as a SIMD computer. It also can be used to more efficiently use memory bandwidth within a memory chip. The general technique of doing computations in memory is called Processing-In-Memory (PIM).
The term continuous memory was coined by Hewlett-Packard (HP) to describe a unique feature of certain HP calculators whereby the calculator could internally sustain most, or in later models - all, of the contents of user memory (via battery-backed CMOS memory).
Unbuffered memory modules (UDIMMs) directly expose the memory chip interface to the module connector. Registered or load-reduced variants (RDIMMs/LRDIMMs) use additional active circuitry on the memory module in order to buffer the signals between the memory controller and the DRAM chips. This reduces the capacitive load on the DDR5 bus.
This diagram represents five contiguous memory regions which each hold a pointer and a data block. The List Head points to the 2nd element, which points to the 5th, which points to the 3rd, thereby forming a linked list of available memory regions. A free list (or freelist) is a data structure used in a scheme for dynamic memory allocation.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
This usage of the upper memory area is different from using upper memory blocks, which was used to free conventional memory by moving device drivers and TSRs into the upper 384 KB of the 1 MB address space, but left the amount of addressable memory (640 KB) intact.