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Single data rate SDRAM has a single 10-bit programmable mode register. Later double-data-rate SDRAM standards add additional mode registers, addressed using the bank address pins. For SDR SDRAM, the bank address pins and address lines A10 and above are ignored, but should be zero during a mode register write.
Basic memory type (7 = DDR SDRAM) 3: 0x03: Bank 2 row address bits (0–15) Bank 1 row address bits (1–15) Bank 2 is 0 if same as bank 1. 4: 0x04: Bank 2 column address bits (0–15) Bank 1 column address bits (1–15) Bank 2 is 0 if same as bank 1. 5: 0x05: Number of RAM banks on module (1–255) Commonly 1 or 2 6: 0x06: Module data width ...
DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).
The standard defines SDRAM packages containing two independent 16-bit access channels, each connected to up to two dies per package. Each channel is 16 data bits wide, has its own control/address pins, and allows access to 8 banks of DRAM. Thus, the package may be connected in three ways:
A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above]. When data is ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
A third bank group bit (BG2) was added, allowing up to eight bank groups (2 → 3). The maximum number of banks per bank group remains at four (2 → 2), The number of row address bits remains at 17, for a maximum of 128K rows (17 → 17). One more column address bit (C10) is added, allowing up to 8192 columns (1 KB pages) in ×4 chips (11 → 12).
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, "double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing.