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A parallel line of research seeks to create nanoelectronic devices which could interact with single cells for use in basic biological research. [21] These devices are called nanosensors. Such miniaturization on nanoelectronics towards in vivo proteomic sensing should enable new approaches for health monitoring, surveillance, and defense technology.
The only thing left to do is find a way to eliminate the errors that come with such a small device and nanocircuits will become a way of all electronics. However, eventually there will be a limit as to how small nanocircuits can become and computers and electronics will reach their equilibrium speeds.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
In 2000, the first very-large-scale integration (VLSI) NEMS device was demonstrated by researchers at IBM. Its premise was an array of AFM tips which can heat/sense a deformable substrate in order to function as a memory device (Millipede memory). [12] Further devices have been described by Stefan de Haan. [13]
Klimeck in 2022. Klimeck's research interest is in the modeling of nanoelectronic devices, parallel cluster computing, genetic algorithms, and parallel image processing.He has been driving the development of the Nanoelectronic Modeling Tool NEMO since 1994.
Being a branch of nanoscience and nanotechnology, nanoionics is unambiguously defined by its own objects (nanostructures with FIT), subject matter (properties, phenomena, effects, mechanisms of processes, and applications connected with FIT at nano-scale), method (interface design in nanosystems of superionic conductors), and the criterion (R/L ~1, where R is the length scale of device ...
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The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology. [1] FinFET is a type of non-planar transistor, or "3D" transistor. [2] It is the basis for modern nanoelectronic semiconductor device fabrication.