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A plume ejected from a SrRuO 3 target during pulsed laser deposition. One possible configuration of a PLD deposition chamber. Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited.
Pulsed operation of lasers refers to any laser not classified as continuous wave, so that the optical power appears in pulses of some duration at some repetition rate. [1] This encompasses a wide range of technologies addressing a number of different motivations. Some lasers are pulsed simply because they cannot be run in continuous mode.
Laser ablation or photoablation (also called laser blasting [1] [2] [3]) is the process of removing material from a solid (or occasionally liquid) surface by irradiating it with a laser beam. At low laser flux, the material is heated by the absorbed laser energy and evaporates or sublimates .
Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.
Thermal laser epitaxy (TLE) is a physical vapor deposition technique that utilizes irradiation from continuous-wave lasers to heat sources locally for growing films on a substrate. [ 1 ] [ 2 ] This technique can be performed under ultra-high vacuum pressure or in the presence of a background atmosphere, such as ozone , to deposit oxide films.
In physics and physical chemistry, time-resolved spectroscopy is the study of dynamic processes in materials or chemical compounds by means of spectroscopic techniques.Most often, processes are studied after the illumination of a material occurs, but in principle, the technique can be applied to any process that leads to a change in properties of a material.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
It employs a laser source for pulsed laser generation which is responsible for excitation of the sample mixture, which consists of the analyte and substrate materials. On the other side of the instrument, the mass analyzer which separates the analytes according to their mass-to-charge ratio (m/z) and the detector are located.