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Toshiba in 2007 [24] and Samsung in 2009 [25] announced the development of 3D V-NAND, a means of building a standard NAND flash bit string vertically rather than horizontally to increase the number of bits in a given area of silicon. Figure 6. Vertical NAND structure. A rough idea of the cross section of this is shown in figure 6.
Samsung began the mass-production of its 3D NAND modules in August last year, which compared to its planar NAND modules, are twice as fast, last 10 times longer, and consume 50% less power.
Samsung may have overcome that barrier (if temporarily) by mass-producing the first 3D vertical NAND memory, or V-NAND. Instead of putting memory cells on a conventional 2D plane, the company ...
In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.
[52] 3D V-NAND (vertical NAND) technology stacks NAND flash memory cells vertically within a chip using 3D charge trap flash (CTP) technology. 3D V-NAND technology was first announced by Toshiba in 2007, [53] and the first device, with 24 layers, was first commercialized by Samsung Electronics in 2013.
Just over four years since it unveiled the first 3D vertical NAND memory, Samsung has developed its first 1 terabit (Tb) V-NAND chip. The flash memory technology, used in devices ranging from ...
In 2017, Samsung Electronics combined 3D IC stacking with its 3D V-NAND technology (based on charge trap flash technology), manufacturing its 512 GB KLUFG8R1EM flash memory chip with eight stacked 64-layer V-NAND chips. [92] In 2019, Samsung produced a 1 TB flash chip with 16 stacked V-NAND dies.
The 3D NAND industry is poised to take off. In a research report issued last month, TechNavio said that the rising flash-storage needs at practical price points will compel enterprise clients to ...
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